A conservative and archaic governing administration, terribly structured and with even worse intentions, was in charge of the place, centralizing all powers in Vicente Cerna, bold armed forces male, who not proud of the final rank, experienced promoted himself to the Army Marshall rank, Although that rank didn't exist and it doesn't exist in the Guatemalan navy.

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Leaders from the political opposition have also been implicated in CICIG investigations: numerous legislators and members of Libertad Democrática Renovada get together (LIDER) have been formally accused of bribery-associated concerns, prompting a big decline from the electoral prospects of its presidential applicant, Manuel Baldizón, who until April were Nearly sure to grow to be another Guatemalan president inside the 6 September 2015 presidential elections.

0 eV. - 特許庁 前記光素子及び前記バイパス素子の間のポテンシャル障壁は前記光素子及び前記少なくとも一つのスイッチング素子の間のポテンシャル障壁よりも低い。例文帳に追加 The likely barrier in between the optical component along with the by-go component is about decrease than that concerning the optical aspect and no less than one switching ingredient. - 特許庁 例文 前記Ｐｔ層１０を前記固定磁性層４と前記絶縁障壁層５との間に介在させると、前記絶縁障壁層５の障壁高さ（ポテンシャル高さ）や障壁幅（ポテンシャル幅）に変化が生じると考えられ、これにより、ＶＣＲの絶対値を小さくできる。例文帳に追加 It is supposed that interposing of your Pt layer 10 between the mounted magnetic layer 4 as well as insulating barrier layer five will lead to the barrier top (opportunity peak) and also the barrier width (likely width) of your insulating barrier layer 5 to alter, and absolutely the price of the VCR can be lowered by this. - 特許庁 >>例文の一覧を見る 調べた例文を記録して、 効率よく覚えましょう

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Regard vegetation by leaving them be, and be certain not to transport everything – even sand –in between the islands. Before you leave, study up on each of the biosecurity policies of the exceptional ecosystem, and be sure to not deliver any agricultural merchandise on the islands.

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例文 オーバーフローバリア領域１６は、第１電荷障壁部４０と、第１電荷障壁部４０より信号電荷に対するポテンシャルが高い第２電荷障壁部４１とからなる。例文帳に追加 An overflow barrier area sixteen consists of a primary demand barrier aspect forty along with a next cost barrier portion 41 of which the opportunity with regard to sign costs is increased than that of the very first charge barrier part 40. - 特許庁 スピントランジスタは、電流変動率を増大するために単一のポテンシャル障壁構造を使用する。例文帳に追加 The spin transistor takes advantage of only one prospective barrier construction to improve the present improve fee. - 特許庁 ポテンシャル障壁領域１２は例えば金属層１２ａおよび半導体層１２ｂからなり、それらの間にショットキー障壁が形成される。例文帳に追加 The potential barrier location 12 comprises, such as, a metal layer 12a plus a semiconductor layer 12b, amongst which a Schottky barrier is shaped. - 特許庁 すなわち、ドナーのイオンは、この界面近傍においてポテンシャルの負方向に突出したスパイク状のポテンシャル障壁φ_ＢＡＲＲＩＥＲを相殺している。例文帳に追加 Which is, the ion of the doner cancels a spike-like possible barrier ϕ_BARRIER protruding in a very adverse path in the probable during the vicinity in the interface. - 特許庁 このバリア領域６の形成するポテンシャル障壁の最終転送段４に対する高さは、転送ゲート領域７によって形成されるポテンシャル障壁の最終転送段４に対する高さよりも低い。例文帳に追加 A top of your potential barrier fashioned from the barrier area 6 relative to the final transfer phase four is decreased than a top of a possible barrier shaped during the transfer gate region seven relative to the ultimate transfer stage 4.

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